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Infineon Technologies CY7C1021BN-15VXET — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1021BN-15VXET — 1Mbit Async SRAM, 15ns, 5V

MPNCY7C1021BN-15VXET
Obsolete

Infineon (Cypress) CY7C1021BN-15VXET: 1 Mbit asynchronous SRAM, 64K×16 parallel organization, 15 ns access time, 4.5–5.5 V supply, -40 to 125 °C operating range, 44-SOJ surface-mount package, tape & reel.

$3.6000Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY7C1021BN-15VXET Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C~125°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page15ns

Frequently asked questions

What is the technology and access time of the CY7C1021BN-15VXET?

It is a 1 Mbit asynchronous SRAM with a 15 ns access time and a matching 15 ns write cycle, operating on a single 4.5–5.5 V supply rail.