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Infineon Technologies CY7C057V-12AXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C057V-12AXC Dual-Port SRAM, 1.152Mbit 32Kx36, 12ns

MPNCY7C057V-12AXC
Obsolete

Cypress (now Infineon) CY7C057V-12AXC, 1.152Mbit dual-port asynchronous SRAM, 32K×36 organization, 12 ns access/write cycle, 3V–3.6V supply, 144-LQFP tray, 0°C–70°C.

$139.9100Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CY7C057V-12AXC Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Dual Port, Asynchronous
Access time12 ns
Memory size1.152Mbit
Memory formatSRAM
Case144-LQFP
Memory organization32K x 36
Write cycle time - word, page12ns

Frequently asked questions

What are the timing constraints for interfacing this SRAM to a 33 MHz bus or 50 ns wait-state microcontroller?

The 12 ns access time and 12 ns write cycle time are faster than a 33 MHz bus cycle (~30 ns), leaving comfortable margin for FPGA read-FSM timing closure. The 50 ns wait-state microcontroller bus easily satisfies the SRAM's write pulse width requirement. No byte-enable or bank-select details are available in the current evidence — confirm against the full Cypress datasheet for the 32K×36 word strobe architecture.