NVSRAM with instant non-volatile capture
The Cypress CY14B108N-BA25XI is an 8 Mbit Non-Volatile SRAM organized as 512K x 16 bits, with a 25 ns access time and a parallel interface. It combines the read/write speed of an SRAM with battery-free data retention, storing the full memory array to on-chip non-volatile elements on a store command or power-loss event. This eliminates the need for a separate EEPROM or backup battery in industrial controllers, PLCs, and embedded data loggers that must preserve configuration or process variables through a power cycle.
25 ns access — bus timing fit
25 ns access time and 25 ns write cycle time.
Supply and temperature range
Rated for 2.7 V supply and -40°C to 85°C operating temperature.
Comparison with CY14B116N-ZSP25XI
The CY14B116N-ZSP25XI doubles the density to 16 Mbit (1M x 16) while keeping the same 25 ns access time, 2.7 V supply, parallel interface, and -40°C to 85°C temperature range. The pinout and package are identical, so a board designed for the 8 Mbit part can accept the 16 Mbit variant without layout changes — useful for firmware growth or consolidating BOM lines.