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Infineon Technologies BSS123NH6327XTSA1 — Discrete Semiconductors

BSS123NH 100V 190mA OptiMOS™ N-CH SOT-23 — Infineon | ICBOMS

MPNBSS123NH6327XTSA1
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MOSFET N-CH 100V 190MA SOT23-3

$0.4100Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BSS123NH6327XTSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C190mA (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.8V @ 13µA
Rds on (Max) @ id, vgs6Ohm @ 190mA, 10V
Gate charge (Qg) (Max) @ vgs0.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20.9 pF @ 25 V