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GigaDevice Semiconductor (HK) Limited GD25Q80CNIGR — Memory (DRAM / SRAM / Flash / EEPROM)

GigaDevice Semiconductor (HK) Limited GD25Q80CNIGR

MPNGD25Q80CNIGR
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GD25Q80CNIGR specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency120 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologyFLASH - NOR
Memory size8Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization1M x 8
Write cycle time - word, page50µs, 2.4ms