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GigaDevice Semiconductor (HK) Limited GD25Q256EYIGR — Memory (DRAM / SRAM / Flash / EEPROM)

GigaDevice Semiconductor (HK) Limited GD25Q256EYIGR

MPNGD25Q256EYIGR
Active

IC FLASH 256MBIT SPI/QUAD 8WSON

$3.7500Ref. price · indicative, final on quote
Packaging8-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GD25Q256EYIGR specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency133 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyFLASH - NOR
Access time7 ns
Memory size256Mbit
Memory formatFLASH
Case8-WDFN Exposed Pad
Memory organization32M x 8
Write cycle time - word, page50µs, 2.4ms