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GigaDevice Semiconductor (HK) Limited GD25Q127CSJG — Memory (DRAM / SRAM / Flash / EEPROM)

GigaDevice Semiconductor (HK) Limited GD25Q127CSJG

MPNGD25Q127CSJG
Active
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GD25Q127CSJG specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.7V ~ 3.6V
Clock frequency104 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C~105°C(TA)
PackageTube
TechnologyFLASH - NOR
Memory size128Mbit
Memory formatFLASH
Case8-SOIC (0.209\", 5.30mm Width)
Memory organization16M x 8
Write cycle time - word, page12µs, 2.4ms