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GigaDevice Semiconductor (HK) Limited GD25Q127CBIGY — Memory (DRAM / SRAM / Flash / EEPROM)

GigaDevice Semiconductor (HK) Limited GD25Q127CBIGY

MPNGD25Q127CBIGY
Active
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GD25Q127CBIGY specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Voltage2.7V ~ 3.6V
Frequency104 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologyFLASH - NOR
Memory size128Mbit
Memory formatFLASH
Case24-TBGA
Memory organization16M x 8
Write cycle time - word, page12µs, 2.4ms