EPC2106 – Ganfet 2N-Ch 100V 1.7A Die | ICBOMS
MPNEPC2106
Active
GANFET 2N-CH 100V 1.7A DIE
$1.85Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 1.7A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 600µA |
| Rds on (Max) @ id, vgs | 70mOhm @ 2A, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.73nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 75pF @ 50V |