Skip to main content
EPC2016C

EPC2016C eGaN FET N-Ch 100V 18A Die — EPC | ICBOMS

MPNEPC2016C
Active

GANFET N-CH 100V 18A DIE

$2.45Ref. price · indicative, final on quote
PackagingDie
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

EPC2016C Technical Specifications
ParameterValue
SerieseGaN®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C18A (Ta)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+6V, -4V
TechnologyGaNFET (Gallium Nitride)
CaseDie
Vgs(th) (Max) @ id2.5V @ 3mA
Rds on (Max) @ id, vgs16mOhm @ 11A, 5V
Gate charge (Qg) (Max) @ vgs4.5 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds420 pF @ 50 V