Diodes Incorporated ZXTP Memory Series

3 variants · Diodes IncorporatedAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the Diodes Incorporated ZXTP Memory Series

The Diodes Incorporated ZXTP Memory Series series groups 3 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common current - collector cutoff of 50nA (ICBO), FET type of PNP and mounting of Surface Mount. Variants differ by case, current - collector (Ic) and DC current gain (hFE) (Min) @ ic, vce, so you can match the exact case your application requires using the selection guide below. All listed Diodes Incorporated ZXTP Memory Series part numbers are active and orderable.

Select a variant by

Case: TO-236-3, SC-59, SOT-23-3 · TO-243AA
Current - collector (Ic): 1 A · 3 A · 4 A
DC current gain (hFE) (Min) @ ic, vce: 100 @ 150mA, 200mV · 300 @ 10mA, 2V
Power - max: 1.25 W · 1.5 W
Voltage - collector emitter breakdown: 20 V · 40 V · 100 V
Frequency: 270MHz · 290MHz
Vce saturation (Max) @ ib, ic: 180mV @ 400mA, 4A · 220mV @ 300mA, 3A

Shared specifications

Current - collector cutoff: 50nA (ICBO)
FET type: PNP
Mounting: Surface Mount
Operating temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)

Variant comparison

Parameter	ZXTP25020DFHTA	ZXTP25040DFHTA	ZXTP4003ZTA
Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-243AA
Current - collector (Ic)	4 A	3 A	1 A
DC current gain (hFE) (Min) @ ic, vce	300 @ 10mA, 2V	300 @ 10mA, 2V	100 @ 150mA, 200mV
Power - max	1.25 W	1.25 W	1.5 W
Voltage - collector emitter breakdown	20 V	40 V	100 V
Frequency	290MHz	270MHz	—
Vce saturation (Max) @ ib, ic	180mV @ 400mA, 4A	220mV @ 300mA, 3A	—

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