Diodes Incorporated FZT7 Memory Series

2 variants · Diodes IncorporatedAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the Diodes Incorporated FZT7 Memory Series

The Diodes Incorporated FZT7 Memory Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-261-4, TO-261AA, FET type of PNP and mounting of Surface Mount. Variants differ by current - collector (Ic), current - collector cutoff and DC current gain (hFE) (Min) @ ic, vce, so you can match the exact current - collector (Ic) your application requires using the selection guide below. All listed Diodes Incorporated FZT7 Memory Series part numbers are active and orderable.

Select a variant by

Current - collector (Ic): 3 A · 500 mA
Current - collector cutoff: 100nA · 100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce: 100 @ 500mA, 2V · 300 @ 10mA, 2V
Frequency: 100MHz · 140MHz
Vce saturation (Max) @ ib, ic: 250mV @ 50mA, 500mA · 600mV @ 300mA, 3A
Voltage - collector emitter breakdown: 60 V · 140 V

Shared specifications

Case: TO-261-4, TO-261AA
FET type: PNP
Mounting: Surface Mount
Operating temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)
Power - max: 2 W

Variant comparison

Parameter	FZT751TA	FZT795ATA
Current - collector (Ic)	3 A	500 mA
Current - collector cutoff	100nA (ICBO)	100nA
DC current gain (hFE) (Min) @ ic, vce	100 @ 500mA, 2V	300 @ 10mA, 2V
Frequency	140MHz	100MHz
Vce saturation (Max) @ ib, ic	600mV @ 300mA, 3A	250mV @ 50mA, 500mA
Voltage - collector emitter breakdown	60 V	140 V

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