Diodes Incorporated FMMT Memory Series

4 variants · Diodes IncorporatedAll Memory (DRAM / SRAM / Flash / EEPROM) →

About the Diodes Incorporated FMMT Memory Series

The Diodes Incorporated FMMT Memory Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-236-3, SC-59, SOT-23-3, mounting of Surface Mount and operating temperature of -55°C ~ 150°C (TJ). Variants differ by current - collector (Ic), current - collector cutoff and DC current gain (hFE) (Min) @ ic, vce, so you can match the exact current - collector (Ic) your application requires using the selection guide below. All listed Diodes Incorporated FMMT Memory Series part numbers are active and orderable.

Select a variant by

Current - collector (Ic): 1 A · 150 mA · 500 mA
Current - collector cutoff: 10µA · 100nA
DC current gain (hFE) (Min) @ ic, vce: 100 @ 50mA, 10V · 100 @ 250mA, 10V · 250 @ 500mA, 10V · 15000 @ 100mA, 5V
FET type: NPN · NPN - Darlington · PNP
Power - max: 500 mW · 625 mW
Vce saturation (Max) @ ib, ic: 1V @ 5mA, 500mA · 300mV @ 50mA, 500mA · 330mV @ 150mA, 1A · 500mV @ 6mA, 50mA
Voltage - collector emitter breakdown: 100 V · 120 V · 400 V
Frequency: 50MHz · 100MHz · 200MHz

Shared specifications

Case: TO-236-3, SC-59, SOT-23-3
Mounting: Surface Mount
Operating temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR); Cut Tape (CT)

Variant comparison

Parameter	FMMT494QTA	FMMT723QTA	FMMT558TA	FMMT614TA
Current - collector (Ic)	1 A	1 A	150 mA	500 mA
Current - collector cutoff	100nA	100nA	100nA	10µA
DC current gain (hFE) (Min) @ ic, vce	100 @ 250mA, 10V	250 @ 500mA, 10V	100 @ 50mA, 10V	15000 @ 100mA, 5V
FET type	NPN	PNP	PNP	NPN - Darlington
Power - max	500 mW	625 mW	500 mW	500 mW
Vce saturation (Max) @ ib, ic	300mV @ 50mA, 500mA	330mV @ 150mA, 1A	500mV @ 6mA, 50mA	1V @ 5mA, 500mA
Voltage - collector emitter breakdown	120 V	100 V	400 V	100 V
Frequency	100MHz	200MHz	50MHz	—

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