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Diodes Incorporated ZXMN7A11GTA

ZXMN7A11GTA - Diodes Incorporated

MPNZXMN7A11GTA
End of Life

MOSFET N-CH 70V 2.7A SOT223

$0.85Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMN7A11GTA specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage70 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.7A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs130mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs7.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds298 pF @ 40 V