ZXMN6A09GTA

Diodes Incorporated

MOSFET N-CH 60V 5.4A SOT223

Diodes Incorporated ZXMN6A09GTA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN6A09GTA specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.4A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 8.2A, 10V
Gate charge (Qg) (Max) @ vgs24.2 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1407 pF @ 40 V
ZXMN6A09GTA
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