ZXMN3B04N8TA

Diodes Incorporated

MOSFET N-CH 30V 7.2A 8SO

Diodes Incorporated ZXMN3B04N8TA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN3B04N8TA specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C7.2A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id700mV @ 250µA (Min)
Rds on (Max) @ id, vgs25mOhm @ 7.2A, 4.5V
Gate charge (Qg) (Max) @ vgs23.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2480 pF @ 15 V
ZXMN3B04N8TA
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