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Diodes Incorporated ZXMN3A04DN8TA

ZXMN3A04DN8TA - Diodes Incorporated

MPNZXMN3A04DN8TA
End of Life

MOSFET 2N-CH 30V 6.5A 8-SOIC

$1.82Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMN3A04DN8TA specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6.5A
Power - max1.81W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs20mOhm @ 12.6A, 10V
Gate charge (Qg) (Max) @ vgs36.8nC @ 10V
Input capacitance (Ciss) (Max) @ vds1890pF @ 15V