ZXMN2A04DN8TA - Diodes Incorporated
MPNZXMN2A04DN8TA
End of Life
MOSFET 2N-CH 20V 5.9A 8-SOIC
$2.02Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5.9A |
| Power - max | 1.8W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 700mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 25mOhm @ 5.9A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 22.1nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 1880pF @ 10V |