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Diodes Incorporated ZXMN10B08E6TA

ZXMN10B08E6TA - Diodes Incorporated

MPNZXMN10B08E6TA
End of Life

MOSFET N-CH 100V 1.6A SOT26

$0.76Ref. price · indicative, final on quote
PackagingSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMN10B08E6TA specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.3V, 10V
Current - continuous drain (Id) @ 25°C1.6A (Ta)
Power dissipation1.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 1.6A, 10V
Gate charge (Qg) (Max) @ vgs9.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds497 pF @ 50 V