ZXMN10B08E6TA

Diodes Incorporated

MOSFET N-CH 100V 1.6A SOT26

Diodes Incorporated ZXMN10B08E6TA
Download datasheet (PDF)
[IN STOCK] In Stock: 3 pcs
$1.30/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN10B08E6TA specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.3V, 10V
Current - continuous drain (Id) @ 25°C1.6A (Ta)
Power dissipation1.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs230mOhm @ 1.6A, 10V
Gate charge (Qg) (Max) @ vgs9.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds497 pF @ 50 V
ZXMN10B08E6TA
[ALLOC] verified
Quote