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Diodes Incorporated ZXMN10A25KTC

ZXMN10A25KTC - Diodes Incorporated

MPNZXMN10A25KTC
End of Life

MOSFET N-CH 100V 4.2A TO252-3

$1.32Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMN10A25KTC specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C4.2A (Ta)
Power dissipation2.11W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 2.9A, 10V
Gate charge (Qg) (Max) @ vgs17.16 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds859 pF @ 50 V