ZXMN10A08DN8TA

Diodes Incorporated

MOSFET 2N-CH 100V 1.6A 8SO

Diodes Incorporated ZXMN10A08DN8TA
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ZXMN10A08DN8TA specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C1.6A
Power - max1.25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA (Min)
Rds on (Max) @ id, vgs250mOhm @ 3.2A, 10V
Gate charge (Qg) (Max) @ vgs7.7nC @ 10V
Input capacitance (Ciss) (Max) @ vds405pF @ 50V
ZXMN10A08DN8TA
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