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Diodes Incorporated ZXMHC3A01N8TC

ZXMHC3A01N8TC - Diodes Incorporated

MPNZXMHC3A01N8TC
End of Life

MOSFET 2N/2P-CH 30V 2.17A 8SO

$1.05Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMHC3A01N8TC specifications
ParameterValue
FET type2 N and 2 P-Channel (Half Bridge)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.17A, 1.64A
Power - max870mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs3.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds190pF @ 25V