Skip to main content
Diodes Incorporated ZXMC6A09DN8TA

ZXMC6A09DN8TA - Diodes Incorporated

MPNZXMC6A09DN8TA
End of Life

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

$2.0Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMC6A09DN8TA specifications
ParameterValue
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C3.9A, 3.7A
Power - max1.8W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs45mOhm @ 8.2A, 10V
Gate charge (Qg) (Max) @ vgs24.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds1407pF @ 40V, 1580pF @ 40V