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Diodes Incorporated ZXMC3A17DN8TA

ZXMC3A17DN8TA - Diodes Incorporated

MPNZXMC3A17DN8TA
End of Life

MOSFET N/P-CH 30V 4.1A/3.4A 8SO

$0.98Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

ZXMC3A17DN8TA specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C4.1A, 3.4A
Power - max1.25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA (Min)
Rds on (Max) @ id, vgs50mOhm @ 7.8A, 10V
Gate charge (Qg) (Max) @ vgs12.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds600pF @ 25V