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Diodes Incorporated ZVP4105A — Discrete Semiconductors

Diodes Incorporated ZVP4105A

MPNZVP4105A
Obsolete
$0.9100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVP4105A specifications
ParameterValue
FET typeP-Channel
MountingThrough Hole
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C175mA (Ta)
Power dissipation625mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs10Ohm @ 100mA, 5V
Input capacitance (Ciss) (Max) @ vds40 pF @ 25 V