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Diodes Incorporated ZVP3310ASTZ — Discrete Semiconductors

Diodes Incorporated ZVP3310ASTZ

MPNZVP3310ASTZ
Obsolete
$0.7000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVP3310ASTZ specifications
ParameterValue
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C140mA (Ta)
Power dissipation625mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseE-Line-3
Vgs(th) (Max) @ id3.5V @ 1mA
Rds on (Max) @ id, vgs20Ohm @ 150mA, 10V
Input capacitance (Ciss) (Max) @ vds50 pF @ 25 V