Diodes Incorporated ZVP3310ASTOA
MPNZVP3310ASTOA
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 140mA (Ta) |
| Power dissipation | 625mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | E-Line-3 |
| Vgs(th) (Max) @ id | 3.5V @ 1mA |
| Rds on (Max) @ id, vgs | 20Ohm @ 150mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 50 pF @ 25 V |