Diodes Incorporated ZVP3310A
MPNZVP3310A
Active
$0.7000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 140mA (Ta) |
| Power dissipation | 625mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ id | 3.5V @ 1mA |
| Rds on (Max) @ id, vgs | 20Ohm @ 150mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 50 pF @ 25 V |