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Diodes Incorporated ZVNL110ASTZ — Discrete Semiconductors

Diodes Incorporated ZVNL110ASTZ

MPNZVNL110ASTZ
Active
$0.8100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVNL110ASTZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C320mA (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageCut Tape (CT); Tape & Box (TB)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseE-Line-3
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs3Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds75 pF @ 25 V