Skip to main content
Diodes Incorporated ZVN4525E6TC — Discrete Semiconductors

Diodes Incorporated ZVN4525E6TC

MPNZVN4525E6TC
Obsolete
$0.8300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN4525E6TC specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)2.4V, 10V
Current - continuous drain (Id) @ 25°C230mA (Ta)
Power dissipation1.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±40V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.8V @ 1mA
Rds on (Max) @ id, vgs8.5Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs3.65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds72 pF @ 25 V