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Diodes Incorporated ZVN4310A — Discrete Semiconductors

Diodes Incorporated ZVN4310A

MPNZVN4310A
Active

MOSFET N-CH 100V 900MA TO92-3

$1.6000Ref. price · indicative, final on quote
PackagingTO-226-3, TO-92-3 (TO-226AA)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN4310A specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C900mA (Ta)
Power dissipation850mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs500mOhm @ 3A, 10V
Input capacitance (Ciss) (Max) @ vds350 pF @ 25 V