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Diodes Incorporated ZVN4210ASTZ — Discrete Semiconductors

Diodes Incorporated ZVN4210ASTZ

MPNZVN4210ASTZ
Active
$0.8400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN4210ASTZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C450mA (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT) Tape & Box (TB)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseE-Line-3
Vgs(th) (Max) @ id2.4V @ 1mA
Rds on (Max) @ id, vgs1.5Ohm @ 1.5A, 10V
Input capacitance (Ciss) (Max) @ vds100 pF @ 25 V