ZVN3310A
Diodes Incorporated
MOSFET N-CH 100V 200MA TO92-3
[IN STOCK] In Stock: 164 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 200mA (Ta) |
| Power dissipation | 625mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) |
| Vgs(th) (Max) @ id | 2.4V @ 1mA |
| Rds on (Max) @ id, vgs | 10Ohm @ 500mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 40 pF @ 25 V |
ZVN3310A
[ALLOC] verified