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Diodes Incorporated ZVN3310A — Discrete Semiconductors

Diodes Incorporated ZVN3310A

MPNZVN3310A
Active

MOSFET N-CH 100V 200MA TO92-3

$0.8700Ref. price · indicative, final on quote
PackagingTO-226-3, TO-92-3 (TO-226AA)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

ZVN3310A Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation625mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2.4V @ 1mA
Rds on (Max) @ id, vgs10Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds40 pF @ 25 V