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Diodes Incorporated ZVN2110GTC — Discrete Semiconductors

Diodes Incorporated ZVN2110GTC

MPNZVN2110GTC
Obsolete
$0.9100Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN2110GTC specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C500mA (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id2.4V @ 1mA
Rds on (Max) @ id, vgs4Ohm @ 1A, 10V
Input capacitance (Ciss) (Max) @ vds75 pF @ 25 V