ZVN2110A

Diodes Incorporated

MOSFET N-CH 100V 320MA TO92-3

Diodes Incorporated ZVN2110A
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Technical specifications

ZVN2110A specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C320mA (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id2.4V @ 1mA
Rds on (Max) @ id, vgs4Ohm @ 1A, 10V
Input capacitance (Ciss) (Max) @ vds75 pF @ 25 V
ZVN2110A
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