Skip to main content
Diodes Incorporated ZVN2106ASTZ — Discrete Semiconductors

Diodes Incorporated ZVN2106ASTZ

MPNZVN2106ASTZ
Active
$0.2878Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVN2106ASTZ specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C450mA (Ta)
Power dissipation700mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseE-Line-3
Vgs(th) (Max) @ id2.4V @ 1mA
Rds on (Max) @ id, vgs2Ohm @ 1A, 10V
Input capacitance (Ciss) (Max) @ vds75 pF @ 18 V