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Diodes Incorporated GBJ810-F — Discrete Semiconductors

Diodes Incorporated GBJ810-F

MPNGBJ810-F
Active

BRIDGE RECT 1PHASE 1KV 8A GBJ

$2.0700Ref. price · indicative, final on quote
Packaging4-SIP, GBJ
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GBJ810-F specifications
ParameterValue
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse1 kV
Voltage - forward (Vf) (Max) @ if1 V @ 4 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified8 A
Operating temperature-65°C~150°C(TJ)
PackageTube
TechnologyStandard
Case4-SIP, GBJ