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Diodes Incorporated GBJ2008-F — Discrete Semiconductors

Diodes Incorporated GBJ2008-F

MPNGBJ2008-F
Active
$2.0300Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GBJ2008-F specifications
ParameterValue
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse800 V
Voltage - forward (Vf) (Max) @ if1.05 V @ 10 A
Current - reverse leakage @ vr10 µA @ 800 V
Current - average rectified20 A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
TechnologyStandard
Case4-SIP, GBJ