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Diodes Incorporated GBJ1006-F — Discrete Semiconductors

Diodes Incorporated GBJ1006-F

MPNGBJ1006-F
Active

BRIDGE RECT 1PHASE 600V 10A GBJ

$1.7500Ref. price · indicative, final on quote
Packaging4-SIP, GBJ
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GBJ1006-F specifications
ParameterValue
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse600 V
Voltage - forward (Vf) (Max) @ if1.05 V @ 5 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified10 A
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
TechnologyStandard
Case4-SIP, GBJ