Diodes Incorporated DXTN5860DFDB-7
MPNDXTN5860DFDB-7
End of Life
SS LOW SAT TRANSISTOR U-DFN2020-
$0.53Ref. price · indicative, final on quote
Packaging3-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 60 V |
| Current - collector (Ic) | 6 A |
| Current - collector cutoff | 100nA |
| DC current gain (hFE) (Min) @ ic, vce | 280 @ 500mA, 2V |
| Power - max | 690 mW |
| Frequency - transition | 115MHz |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 3-UDFN Exposed Pad |
| Vce saturation (Max) @ ib, ic | 315mV @ 300mA, 6A |