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Diodes Incorporated DXTN3C100PDQ-13

Diodes Incorporated DXTN3C100PDQ-13

MPNDXTN3C100PDQ-13
End of Life

SS Low Sat Transistor PowerDI506

$0.82Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DXTN3C100PDQ-13 specifications
ParameterValue
MountingSurface Mount
FET type2 NPN (Dual)
Voltage - collector emitter breakdown100V
Current - collector (Ic)3A
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce150 @ 500mA, 10V
Power - max1.47W
Frequency - transition130MHz
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageBulk
QualificationAEC-Q101
Case8-PowerTDFN
Vce saturation (Max) @ ib, ic330mV @ 300mA, 3A