DMTH8012LPSQ-13
Diodes Incorporated
MOSFET N-CH 80V 10A PWRDI5060
[IN STOCK] In Stock: 114 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta), 72A (Tc) |
| Power dissipation | 2.6W (Ta), 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 17mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 46.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2051 pF @ 40 V |
DMTH8012LPSQ-13
[ALLOC] verified