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Diodes Incorporated DMTH8001STLWQ-13

Diodes Incorporated DMTH8001STLWQ-13

MPNDMTH8001STLWQ-13
End of Life

MOSFET BVDSS: 61V~100V POWERDI10

$5.31Ref. price · indicative, final on quote
Packaging8-PowerSFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH8001STLWQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C270A (Tc)
Power dissipation6W (Ta), 250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs138 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8894 pF @ 50 V