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Diodes Incorporated DMTH61M5SPSW-13

Diodes Incorporated DMTH61M5SPSW-13

MPNDMTH61M5SPSW-13
End of Life

MOSFET BVDSS: 41V~60V POWERDI506

$1.99Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH61M5SPSW-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C225A (Tc)
Power dissipation3.2W (Ta), 167W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.5mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs130.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8306 pF @ 30 V