DMTH6010LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 13.1A PWRDI50

Diodes Incorporated DMTH6010LPDQ-13
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[IN STOCK] In Stock: 26 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMTH6010LPDQ-13 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C13.1A (Ta), 47.6A (Tc)
Power - max2.8W
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
QualificationAEC-Q101
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs11mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs40.2nC @ 10V
Input capacitance (Ciss) (Max) @ vds2615pF @ 30V
DMTH6010LPDQ-13
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