Diodes Incorporated DMTH6005LPSQ-13
MPNDMTH6005LPSQ-13
End of Life
MOSFET N-CH 60V 100A PWRDI5060
$1.6Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20.6A (Ta), 100A (Tc) |
| Power dissipation | 3.2W (Ta), 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 5.5mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2962 pF @ 30 V |