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Diodes Incorporated DMTH43M8LFGQ-13

Diodes Incorporated DMTH43M8LFGQ-13

MPNDMTH43M8LFGQ-13
End of Life

MOSFET N-CH 40V PWRDI3333

$1.16Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH43M8LFGQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C24A (Ta), 100A (Tc)
Power dissipation2.62W (Ta), 65.2W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs40.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2798 pF @ 20 V