DMTH10H2M5STLWQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V,POWERDI10
[IN STOCK] In Stock: 100 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 215A (Tc) |
| Power dissipation | 5.8W (Ta), 230.8W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 124.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8450 pF @ 50 V |
DMTH10H2M5STLWQ-13
[ALLOC] verified