DMTH10H032LFVW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V PowerDI33
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 26A (Tc) |
| Power dissipation | 1.7W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 30mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11.9 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 683 pF @ 50 V |
DMTH10H032LFVW-13
[ALLOC] verified