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Diodes Incorporated DMTH10H032LFVW-13

Diodes Incorporated DMTH10H032LFVW-13

MPNDMTH10H032LFVW-13
End of Life

MOSFET BVDSS: 61V~100V PowerDI33

$0.59Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMTH10H032LFVW-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs11.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds683 pF @ 50 V