Skip to main content
Diodes Incorporated DMT6007LFGQ-13

Diodes Incorporated DMT6007LFGQ-13

MPNDMT6007LFGQ-13
End of Life

MOSFET N-CH 60V 15A PWRDI3333

$1.12Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMT6007LFGQ-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta), 80A (Tc)
Power dissipation2.2W (Ta), 62.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs41.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2090 pF @ 30 V